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(Last updated : 2022-03-25 13:36:36)
Masakazu Muraguchi
Department / Course
Hokkaido University of Science Faculty of Engineering Department of Electrical and Electronic Engineering
Job
Professor
Achievement
Academic background
Present specialized field
Book and thesis
Academic conference presentation
Academic background
2007/03
Degree Acquisition
2003/03
Degree Acquisition
Present specialized field
Others, Others
Book and thesis
Papers
Investigation of features for prediction modeling of nano-scale conduction with time-dependent calculation of electron wave packet Japanese Journal of Applied Physics 61,pp.044001 (Co-authored) 2022/03/16
Papers
Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring Japanese Journal of Applied Physics, (2019) Vol. 58,pp.112002-1.-112002-7. (Co-authored) 2019
Papers
Impact of tungsten sputtering condition on magnetic and transport properties of double-MgO magnetic tunneling junction with CoFeB/W/CoFeB free layer IEEE Transactions on Magnetics, May 2017. Vol. PP (Issue 99),pp.1-1 (Co-authored) 2017
Papers
Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement Japanese Journal of Applied Physics(JJAP), (2017) Vol. 56 (No. 4S),pp.04CF14-1.-04CF14-7. (Co-authored) 2017
Papers
Origin of variation of shift field via annealing at 400◦C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer AIP Advances, January 2017 Vol. 7,pp.055913. (Co-authored) 2017
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Academic conference presentation
2021/10
Modeling of Quantum Electron Transmission Process in Two-dimensional Nanowire System using Recurrent Neural Network (The 34th International Microprocesses and Nanotechnology Conference (MNC 2021))
2018
High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by Ar ion shower for perpendicular anisotropy magnetic tunnel junctions (INTERMAG 2018, 2018/4/27.)
2016/01/12
Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM-Intermag Conference, GV-01, January 12, 2016)
2016/01/12
Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F^2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM- Intermag Conference , 2016/01/12)
2016/01
Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM-Intermag Conference)
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