Researchers & Faculty
Japanese
Masakazu Muraguchi
Department / Course
Hokkaido University of Science Faculty of Engineering Department of Electrical and Electronic Engineering
Job
Professor
Book and thesis
Papers
Sustainable Thermoelectric Materials: Utilizing Fukushima Weathered Biotite via Molten Salt Treatment AIP Advances (14),pp.055034-1-055034-6 (Co-authored) 2024/05
Papers
Investigation of features for prediction modeling of nano-scale conduction with time-dependent calculation of electron wave packet Japanese Journal of Applied Physics 61,pp.044001 (Co-authored) 2022/03/16
Papers
Effect of long-range Coulomb interactions on electron transport in a nanoscale one-dimensional ring Japanese Journal of Applied Physics, (2019) Vol. 58,pp.112002-1.-112002-7. (Co-authored) 2019
Papers
Impact of tungsten sputtering condition on magnetic and transport properties of double-MgO magnetic tunneling junction with CoFeB/W/CoFeB free layer IEEE Transactions on Magnetics, May 2017. Vol. PP (Issue 99),pp.1-1 (Co-authored) 2017
Papers
Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement Japanese Journal of Applied Physics(JJAP), (2017) Vol. 56 (No. 4S),pp.04CF14-1.-04CF14-7. (Co-authored) 2017
Papers
Origin of variation of shift field via annealing at 400◦C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer AIP Advances, January 2017 Vol. 7,pp.055913. (Co-authored) 2017
Papers
Improvement of thermal tolerance of CoFeB-MgO perpendicular-anisotropy magnetic tunnel junctions by controlling boron composition IEEE. Trans. on Mag. (2016) Vol. 52 (Issue 7),pp.3401104-1.-3401104-4. (Co-authored) 2016
Papers
Novel current collapse mode induced by source leakage current in AlGaN/GaN high-electron-mobility transistors and its impact, Japanese Journal of Applied Physics, 55, (2016),pp.08PD06-1.-08PD06-5. (Co-authored) 2016
Papers
Low-Frequency Noise Reduction in Vertical MOSFETs Having Tunable Threshold Voltage Fabricated with 60 nm CMOS Technology on 300 mm Wafer Process Japanese Journal of Applied Physics, 54, 4S (2015),pp.04DC11-1.-04DC11-8. (Co-authored) 2015
Papers
Effect with High Density Nano Dot Type Storage Layer Structure on 20nm Planar NAND Flash Memory Characteristics Japanese Journal of Applied Physics, 53, 4S (2014),pp.4ED17-1.-04ED17-8. (Co-authored) 2014
Papers
Size dependence of electrostatic lens effect in vertical MOSFETs Japanese Journal of Applied Physics, 52, 4S (2014),pp.04EJ09-1.-04EJ09-4. (Co-authored) 2014
Papers
Influence of Coulomb Blockade on Wave Packet Dynamics in Nanoscale Structures Japanese Journal of Applied Physics, 52, 4S (2013),pp.04CJ06-1.-04CJ06-4. (Co-authored) 2013
Papers
Collective Tunneling Model in Charge Trap Type NVM Cell Japanese Journal of Applied Physics, 50, 4S (2011),pp.04DD04-1.-04DD04-4. (Co-authored) 2012
Papers
Multi Electron Wave Packet Dynamics in Applied Electric Fields Japanese Journal of Applied Physics, 51, 2 (2012),pp.02BJ01-1.-02BJ01-5. (Co-authored) 2012
Papers
Role of Synthetic Ferrimagnets in Magnetic Tunnel Jnctions from Wave Packet Dynamics Japanese Journal of Applied Physics, 51, 2 (2012),pp.02BM03-1.-02BM03-4. (Co-authored) 2012
Papers
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure Key Engineering Materials, 470 (2011),pp.48-53 (Co-authored) 2011
Papers
CollectiveTunnelingModelinChargeTrapTypeNVMCell Japanese Journal of Applied Physics (Co-authored) 2011
Papers
Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact Key Engineering Materials, 470 (2011),pp.43-47 (Co-authored) 2011
Papers
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor IEICE Transacions on Electronics, E94-C, 5 (2011),pp.730-736 (Co-authored) 2011
Papers
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET IEICE Transacions on Electronics, E94-C, 5 (2011),pp.737-742 (Co-authored) 2011
Papers
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation IEICE Transacions on Electronics, E94-C, 5 (2011),pp.743-750 (Co-authored) 2011
Papers
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot IEICE Transactions on Electronics, E93-C, 5 (2010),pp.563-568 (Co-authored) 2010
Papers
Proposal of a new physical model for Ohmic contacts Physica E, 42, 4 (2010),pp.2837-2840 (Co-authored) 2010
Papers
Study on Quantum Electron-Dynamics in Vertical MOSFET IEICE Transacions on Electronics, E93-C, 5 (2010),pp.552-556 (Co-authored) 2010
Papers
Resonating Hartree–Fock Approach for Electrons Confined in Two Dimentional Square Quantum Dots Japanese Journal of Applied Physics 48,pp.125002 (Co-authored) 2009
Papers
Theoretical study of the time-dependent phenomenon of photon assisted tunneling through a charged quantum dot Journal of Physics: Condensed Matter, 21, 6 (2009),pp.064230-1.-064230-5. (Co-authored) 2009
Papers
Quantum Cascade Multi-electron Injection into Si-Quantum-Dot Floating Gates Embedded in SiO2 Matrices Applied Surface Science, 254 (2008),pp.6199-6202 (Co-authored) 2008
Papers
First-Principles Study on Time-dependent Phenomena in Photon-Assisted Tunneling I: An Electron Injected into 2D Lozenge Quantum Dot Japanese Journal of Applied Physics, 46, 3A (2007),pp.1224-1235 (Co-authored) 2007
Papers
Interstate interference of electron wave packet tunneling through a quantum ring Physical Review B, 75, 24 (2007),pp.245314-1-245314-15 (Co-authored) 2007
Papers
Time-dependent Ballistic Phenomena of Electron Injected into Half-Ellipse Confined Room Japanese Journal of Applied Physics, 44, 6A (2005),pp.4252-4268 (Co-authored) 2005
Papers
Theoretical study on quantum phenomena of an electron wave packet injected into various potential walls TOWARDS THE CONTROLLABLE QUANTUM STATES, (2003) (Co-authored) 2003