Researcher Database | Faculty of Engineering Department of Electrical and Electronic Engineering

Masakazu Muraguchi

Department / Course Hokkaido University of Science Faculty of Engineering Department of Electrical and Electronic Engineering

Job Professor

Academic conference presentation
2023/06	Machine Learning Based Modeling of Time Evolution Calculations for Electrons in Nanoscale Semiconductors (11th International Conference on Materials for Advanced Technologies (ICMAT2023))
2023/06	Thermal Conductivities and Structures of Fukushima Weathered Biotite (11th International Conference on Materials for Advanced Technologies (ICMAT2023))
2023/06	Thermoelectric Properties of Fukushima Weathered Biotite for Thermoelectric Conversion Materials (11th International Conference on Materials for Advanced Technologies (ICMAT2023))
2021/10	Modeling of Quantum Electron Transmission Process in Two-dimensional Nanowire System using Recurrent Neural Network (The 34th International Microprocesses and Nanotechnology Conference (MNC 2021))
2018	High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by Ar ion shower for perpendicular anisotropy magnetic tunnel junctions (INTERMAG 2018, 2018/4/27.)
2016/01/12	Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM-Intermag Conference, GV-01, January 12, 2016)
2016/01/12	Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F^2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM-　Intermag Conference , 2016/01/12)
2016/01	Increase of Critical Switching Current Density of 10 nm p-MTJ in 4F2 Cell Array Due to Inter-cell Interference Phenomenon (13th Joint MMM-Intermag Conference)
2016	High accurate and low loss current sensing method with novel current path narrowing method for DC-DC converters and its demonstration (2016 IEEE International Telecommunications Energy Conference (INTELEC), pp. 1-6,October 23-27, 2016)
2016	New Model of Switching Delay Induced by Modulation Effect of　Damping and STT Pumping Balance With Programing Current and　Interference Phenomena in P-MTJ Array (Intenational Conference on Solid State Devices and Materials (SSDM), G-3-04, September 26- 29, 2016.)
2016	Novel Integrated Voltage Regulators with High-SideNMOS Power Switch and Dedicated Bootstrap Driver Using Vertical MOSFET for Efficiency Enhancement (2016 International Conference on Solid State Devices and Materials (SSDM), PS-5-01, pp. 743-744, September 26- 29, 2016.)
2016	Optimum boron concentration difference between single and double CoFeB/MgO interface perpendicular MTJs with high thermal tolerance and its mechanism (13th Joint MMM-　Intermag Conference, 2016/01/12)
2015/05	1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance (International Memory Workshop)
2015	10 nmφ perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400℃ high thermal tolerance by boron diffusion control (2015 Symposium on VLSI Technology (2015), 12-2)
2015	10nm p-MTJ array design for suppressing switching delay induced by interference due to magnetic dipole interaction for high density STT-MRAM (International Conference on Solid State Devices and Materials (SSDM2015), O-5-2, 2015/9/29)
2015	A Study of Strain Profile in Channel Region of Vertical MOSFET for Improving Drivability (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2015), 1A-2.)
2015	Channel Length Dependence of Electrostatic Lens Effect in Vertical Body Channel MOSFET (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2015), 1A-4.)
2015	Novel Current Collapse Mode Induced by Source Leakage Current in AlGaN/GaN HEMTs, (2015 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology (2015IWDTF), 2015/11/4)
2015	Novel Design of Electrostatic Lens Potential for Improving Bending Curvature and Transmission Probability of Drive Current for Vertical Body Channel MOSFET (International Conference on Solid State Devices and Materials (SSDM2015), PS-9-9, 29/Sep/2015)
2015	Switch Toggling Technique of Parallel MOSFET Topology for Power Electronics Circuits with Uniform Thermal Distribution (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2015), 4B-3)
2014	1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance (International Memory Workshop (2015), Session 6-3)
2014	Electric Field Effects in Multi-Electron Wave Packet Dynamics in Nano Channels (The IUMRS International Conference in Asia (2014), D5-P26-008.)
2013	A Model Reflecting Preheat Effect by Two-step Writing Technique for High Speed and Stable STT-MRAM (16th International Workshop on Computational Electronics (2013), 248-249)
2013	Coulomb Interaction on Multi-electron Wave Packet Dynamics in Nanoscale channels (44th IEEE Semiconductor Interface Specialists Conference (2013), 11.12)
2013	Dynamical Coulomb Blockade in Multi-Electron Wave Packet Dynamics in Nanostructures (International Conference on Solid State Devices and Materials (2013), E-2-4)
2013	Effect of Electric Field in Multi-Electron Wave Packet Dynamics in Channel of Nanoscale devices (International Symposium on Advanced Nanodevices and Nanotechnology (2013), PII-4)
2013	Effect with Nano Dot Type Storage Layer Structure on Channel Region in 20nm Planar NAND Flash Memory Cell (International Conference on Solid State Devices and Materials (2013), PS-4-5.)
2013	Intrinsic Region Length Dependence of Vertical Double Gate IMOS (16th International Workshop on Computational Electronics (2013), 190-191.)
2013	Multi-electron Wave Packet Dynamics in Nanoscale Devices (International Conference on Solid State Devices and Materials (2013), D-3-3)
2013	Multi-Electron Wave Packets Dynamics under MOSFET-like Potentials (International Symposium on Advanced Nanodevices and Nanotechnology (2013), Thu1-2)
2013	Size Dependence of Electrostatic Lens Effect in Vertical Pillar Type MOSFET (International Conference on Solid State Devices and Materials (2013), E-2-3.)
2012	Applied Electric Field Dependence of Multi-Electron Wave Packet Dynamics (The Eighth International Nanotechnology Conference on Communication and Cooperation 2012, Tu114)
2012	Effect of Coulomb Interaction in Electron Wave Packet Dynamics in Nanoscale Devices (International Conference on Solid State Devices and Materials (2012), PS9-2)
2012	Effectiveness of Time-Dependent Hartree-Fock Approaches for Multi-Electron Wave Packet Dynamics in Nanoscale Structures (International Conference on the Physics of Semiconductors (2012), 37.14)
2012	The Effect of Coulomb Interaction in Multi-Electron Wave Packet Dynamics (International Conference on the Physics of Semiconductors (2012), 67.32.)
2011	Electron dynamics in the nano scale transistor (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2011), 3A-4.)
2011	Multi Electron Wave Packet Dynamics in Applied Electric Fields (International Conference on. Solid State Devices and Materials (2011), J-4-1)
2011	Role of Synthetic Ferrimagnets in MTJs from Wave Packet Dynamics (International Conference on Solid State Devices and Materials (2011), N-8-6)
2011	Theoretical study on current path control by electrostatic lens effect in vertical MOSFET (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2011), 1A-8.)
2010/09	Multi Electron Wave Packet Dynamics in Applied Electric Fields (International Conference on. Solid State Devices and Materials)
2010	Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor (International Meeting for Future of Electron Devices, Kansai (2010), B-2.)
2010	Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure (International Symposium on Technology Evolution for Silicon Nano-Electronics (2010), P-38.)
2010	Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot (International Conference on the Physics of Semiconductors (2010), Th-P2-105,)
2010	Collective Tunneling Model in Charge Trap Type NVM Cell (International Conference on Solid State Devices and Materials (2010), E-3-2)
2010	Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures (217th ECS Meeting (2010), 962.)
2010	Investigation of I-V characteristics in a new electronic structure model of the Ohmic contact for future nano-scale Ohmic contact (International Symposium on Technology Evolution for Silicon Nano-Electronics (2010), P-20.)
2010	Investigation of the new physical model of Ohmic contact for future nano-scale contacts (217th ECS Meeting (2010), 923)
2010	Proposal of a new electronic structure model of Ohmic contacts for the future metallic source and drain (10th International Workshop on Junction Technology (2010), 78-81.)
2010	Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2010), 9B-4)
2010	Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2010), 9B-2.)
2010	The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2010), 7B-1.)
2009	Anomalous temperature dependence of electron tunneling (18th Electronic Properties of Two-Dimensional Systems(EP2DS-18) 14th Modulated Semiconductor Structures (MSS-14) Joint Conference (2009), Mo-eP49.)
2009	Capacitance measurements on quantum dots coupled to a two-dimensional electron system (13th Advanced Heterostructures and Nanostructures Workshop (2008), Quantum Dot I -5.)
2009	Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices (18th Electronic Properties of Two-Dimensional Systems, 14th Modulated Semiconductor Structures (MSS-14) Joint Conference (2009), Tu-mP22)
2009	Importance of Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot (2009 Asia-Pacific Workshop on Fundamentals and Applications　of Advanced Semiconductor Devices (2009) , 3A.8, 24-26.)
2009	New Tunneling Model with Dependency of Temperature Measured in Si Nano-Dot Floating Gate MOS Capacitor (International Conference on Solid State Devices and Materials (2009), K-2-1.)
2009	Physics of Nano-contact between Si Quantum Dots and Inversion Layer (216th ECS Meeting (2009), E10.)
2009	Proposal of a new physical model for Ohmic contacts (18th Electronic Properties of Two-Dimensional Systems(EP2DS-18) 14th Modulated Semiconductor Structures (MSS-14) Joint Conference (2009), Th-mP32)
2009	Study of Electronic State in Electrode for Nano-Electronic Devices (The 2009 International Meeting for Future of Electron Devices, Kansai (2009), B-5, 46-47.)
2009	Study of Stability of MOS Current Mode Logic NAND Circuit on Input Timing Fluctuation (The 2009 International Meeting for Future of Electron Devices, Kansai (2009), C-3, 58-59)
2009	Study on Quantum Electro-Dynamics in Vertical MOSFET (2009 Asia-Pacific Workshop on Fundamentals and Applications　of Advanced Semiconductor Devices (2009) , 2B.10, 24-26)
2008	Theoretical investigation of quantum dot coupled to a two-dimensional electron system (13th Advanced Heterostructures and Nanostructures Workshop (2008), Quantum Dot I -4)
2008	Theoretical Studies of Coupled Quantum Dot System with a Two-dimensional Electron Gas in the Magnetic Fields (International conference on Low Temperature Physics (2008), PD-Fr260)
2008	Theoretical Study of the Electron Dynamics of a Quantum Wire Coupled with the Quantum Dots (International conference on Low Temperature Physics (2008), PD-Th254)
2008	Theoretical Study on Electron Dynamics for a Two-dimensional Electron Gas Coupled with a Quantum Dot (International Conference on the Physics of Semiconductors (2008), Th-PD1-066)
2008	Theoretical Study on Time-dependent Phenomena of Photon-Assisted Tunneling through Charged Quantum Dot (International Conference on Quantum Simulators and Design 2008(2008), PB-54)
2008	Tunable Interaction between the Two-dimensional Electron Gas and an Isolated Level by the Magnetic Field (International Conference on the Physics of Semiconductors (2008), Th-PD1-051)
2007	Quantum Cascade Multi-electron Injection into Si-Quantum-Dot Floating Gate Embedded in SiO2 Matrix (International Symposium on Control of Semiconductor Interfaces (2007), OB1-4.)
2006	First-Principles Study on Time-Dependent Phenomena in Photon-Assisted Tunneling: Electrons Injected into 2D Lozenge Quantum Dot (International Conference on Quantum Simulators and Design (2006), P-53)
2006	Orbital Interference of an Electron Wave Packet Tunneling through the 2D Quantum Ring (International Conference on Quantum Simulators and Design (2006), P-54)
2005	Dynamical Quantum Properties of Electrons Controlled by Time-Dependent External Field (Material Research Society Fall Meeting (2005), P13.27)